50N60 MOSFET Transistor N-Channel 600V 50A TO-3PN FQA50N60

High voltage capability with 600V drain-to-source rating.
50A continuous drain current for high-power applications.
Low R_DS(on) (on-resistance) for reduced conduction losses.
Fast switching speed for efficient operation in high-frequency circuits.
TO-3PN package for enhanced heat dissipation and mechanical durability.
Avalanche energy rated for ruggedness under inductive loads.
Suitable for switch mode power supplies (SMPS), motor control, and inverters.
Reliable performance under high temperature and voltage stress.

FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600 V
Current – Continuous Drain (Id): @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 94 nC @ 10 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds 6300 pF @ 25 V
Power Dissipation (Max) : 1040W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package TO-3PN