50N06 N Channel MOSFET

1 x 50N06 N Channel MOSFET

The 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances. „

Features:

Ultra low gate charge ( typical 30 nC )

Low reverse transfer Capacitance ( CRSS = typical 80 pF )

Fast switching capability

100% avalanche energy specified

Improved dv/dt capability