IRF3205 HEXFET Power MOSFET 55V 110A
N-Channel Power MOSFET
Continuous Drain Current (ID) is 110A when VGS is 10V
Minimum Gate threshold voltage 2V
Drain to Source Breakdown Voltage: 55V
Low On-Resistance of 8.0mΩ
Gate-Source Voltage is (VGS) is ±20V
Rise time is 101ns
It is commonly used with Power Switching circuits
Available in To-220 package
Applications :
Switching Applications
Boost converters
Choppers
Solar inverters
Speed control








There are no reviews yet.